gate-drain capacitance

См. также в других словарях:

• Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… …   Wikipedia

• Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration …   Wikipedia

• емкость затвор-сток — Емкость между затвором и стоком при разомкнутых по переменному току остальных выводах. Обозначение Cзсо Cgdo [ГОСТ 19095 73] Тематики полупроводниковые приборы EN gate drain capacitance DE Gate Drain Kapazität FR capacité grille drain …   Справочник технического переводчика

• ёмкость затвор - сток (полевого транзистора) — — [Я.Н.Лугинский, М.С.Фези Жилинская, Ю.С.Кабиров. Англо русский словарь по электротехнике и электроэнергетике, Москва, 1999 г.] Тематики электротехника, основные понятия EN gate drain capacitance …   Справочник технического переводчика

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

• High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …   Wikipedia

• Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… …   Wikipedia

• Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… …   Wikipedia

• Cascode — The cascode is a two stage amplifier composed of a transconductance amplifier followed by a current buffer. Compared to a single amplifier stage, this combination may have one or more of the following advantages: higher input output isolation,… …   Wikipedia

• CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) (   …   Wikipedia